document number: 91104 www.vishay.com s11-0561-rev. c, 11-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet irfb9n65a, sihfb9n65a vishay siliconix features ? low gate charge q g results in simple drive requirement ? improved gate, avalanch e and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche voltage and current ? compliant to rohs directive 2002/95/ec applications ? switch mode power supply (smps) ? uninterruptible power supply ? high speed power switching typical smps topologies ? single transistor flyback ? single transistor forward notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 24 mh, r g = 25 ? , i as = 5.2 a (see fig. 12). c. i sd ? 5.2 a, di/dt ? 90 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. product summary v ds (v) 650 r ds(on) ( ? )v gs = 10 v 0.93 q g (max.) (nc) 48 q gs (nc) 12 q gd (nc) 19 configuration single n-channel mosfet g d s to-220ab g d s rohs* compliant ordering information package to-220ab lead (pb)-free irfb9n65apbf SIHFB9N65A-E3 snpb irfb9n65a sihfb9n65a absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 650 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 8.5 a t c = 100 c 5.4 pulsed drain current a i dm 21 linear derating factor 1.3 w/c single pulse avalanche energy b e as 325 mj repetitive avalanche current a i ar 5.2 a repetitive avalanche energy a e ar 16 mj maximum power dissipation t c = 25 c p d 167 w peak diode recovery dv/dt c dv/dt 2.8 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91104 2 s11-0561-rev. c, 11-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 % to 80 % v ds . d. uses sihfib5n65a data and test conditions. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -0.75 specifications (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 650 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma d - 670 - mv/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 650 v, v gs = 0 v - - 25 a v ds = 520 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 5.1 a b - - 0.93 ? forward transconductance g fs v ds = 50 v, i d = 3.1 a 3.9 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 1417 - pf output capacitance c oss - 177 - reverse transfer capacitance c rss -7.0- output capacitance c oss v gs = 0 v v ds = 1.0 v, f = 1.0 mhz - 1912 - v ds = 520 v, f = 1.0 mhz - 48 - effective output capacitance c oss eff. v ds = 0 v to 520 v c -84- total gate charge q g v gs = 10 v i d = 5.2 a, v ds = 400 v see fig. 6 and 13 b --48 nc gate-source charge q gs --12 gate-drain charge q gd --19 turn-on delay time t d(on) v dd = 325 v, i d = 5.2 a r g = 9.1 ? ,r d = 62 ? , see fig. 10 b -14- ns rise time t r -20- turn-off delay time t d(off) -34- fall time t f -18- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --5.2 a pulsed diode forward current a i sm --21 body diode voltage v sd t j = 25 c, i s = 5.2 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 5.2 a, di/dt = 100 a/s b - 493 739 ns body diode reverse recovery charge q rr -2.13.2c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) s d g
document number: 91104 www.vishay.com s11-0561-rev. c, 11-apr-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 v = 100v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.2a
www.vishay.com document number: 91104 4 s11-0561-rev. c, 11-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 0 400 800 1200 1600 2000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 5.2a v = 130v ds v = 325v ds v = 520v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
document number: 91104 www.vishay.com s11-0561-rev. c, 11-apr-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (s) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.vishay.com document number: 91104 6 s11-0561-rev. c, 11-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 12d - typical drain-to-source voltage vs. avalanche current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit a a r g i as 0.01 t p d.u.t. l v ds + - v dd driver a 15 v 20 v t p v ds i as 25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.3a 3.3a 5.2a 700 720 740 760 780 800 0123456 a dsav av i , avalanche current (a) v , avalanche voltage (v) q g q gs q gd v g charge 10 v d.u.t. v ds i d i g 3 ma v gs 0.3 f 50 k 0.2 f 12 v current regulator same type as d.u.t. current sampling resistors + -
document number: 91104 www.vishay.com s11-0561-rev. c, 11-apr-11 7 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfb9n65a, sihfb9n65a vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91104 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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